Finally, H2 ICeGaN HEMTs feature a Q G that is 10x lower than silicon parts, and Q OSS is 5x less. Like previous-generation devices, the new 650V H2 ICeGaN transistors are driven similarly to silicon MOSFETs, eliminating the need for complex and inefficient circuits, instead using commercially available industry gate drivers. H2 Series ICeGaN HEMTs employ CGD’s smart gate interface that is said to virtually eliminate typical enhancement-mode (e-mode) GaN weaknesses, delivering significantly improved over-voltage robustness, higher noise-immune threshold, dV/dt suppression and ESD protection. CGD launches second series of ICeGaN 650V HEMTsįabless semiconductor company Cambridge GaN Devices Ltd (CGD) - which was spun out of the University of Cambridge Department of Engineering’s Electrical Power and Energy Conversion group in 2016 and designs, develops and commercializes power transistors and ICs that use GaN-on-silicon substrates - has launched the second series of its ICeGaN 650V gallium nitride high-electron-mobility transistor (HEMT) family.
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